3-4 Heterojunction Structures and High Speed Devices

Abstract

This effort explored the new phenomena in high speed semiconductor devices and structures intended for optoelectronics. A detailed investigation of the collector breakdown properties in GaAs/AlGaAs HBT's has revealed light emission at junctions edges for the first time. The spectral features when analyzed led to the determination of electron and hole threshold energies for ionization for the first time. Additional features observed may shed light into the processing mechanisms not otherwise conveniently accessible. Other areas, e. g., modulation doped FET's, extremely low resistance nonalloyed ohmic contacts, HBT's on InP, quantum wells, optical properties of bulk AlGaAs and InGaAs were among many projects that were explored.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 17, 1989
Accession Number
ADA205946

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Crystal Lattice Vibrations
  • Electronics Laboratories
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Optical Modulators
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Quantum Computing