Selective Pair Luminescence of Magnesium in Gallium Arsenide Dissertation
Abstract
Photoluminescence (PL) and selective pair luminescence (SPL) studies were performed on vapor phase epitaxial (VPE) GaAs. The GaAs included both undoped and Mg ion implanted samples. PL from the unimplanted samples indicated Zn was the dominant impurity with slight traces of C and Si also evident. This assignment was confirmed during SPL measurements of the ion implanted samples. The effect of the Mg implant on the relative intensities of the Mg related SPL transitions was small but discernible. Photoluminescence of the ion implanted materials showed strong Mg impurity spectra; however, the Zn impurity spectra was still dominant. Additionally, a parametric study was performed on the effects of temperature and laser pump intensity on the SPL spectra. Keywords: Gallium arsenides, Ion implantation, Photoluminescence, Magnesium, Ion implantation. Theses.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1988
- Accession Number
- ADA206160
Entities
People
- Jeffrey R. Cavins
Organizations
- Air Force Institute of Technology