Vertical Emitting, Ring Geometry, Ultra-Low Threshold and Ultra-High Speed Quantum Well Lasers for Optical Interconnect
Abstract
The main emphasis during this period has been placed on the following efforts: 1) establishing a system and a method to fabricate gratings; 2) growing and qualifying quantum well GaAs/GaA1As material generated in our low pressure MOCVD reactor; 3) fabrication of ultra-low threshold buried heterostructure lasers using liquid-phase-epitaxy regrowth; 4) processing of standard double heterostructure ring lasers in order to determine the losses associated with curved structures. A system was designed and set up for fabrication of submicron gratings in order to be able to generate gratings required for vertically emitting lasers. The system consists of a He-Cd laser which emits light in the 325 nm UV line. The light is spatially filtered and expanded and then split into a couple of beams that create an interference pattern. Using this system we have exposed GaAs wafers that were coated with positive photoresist to create gratings with periods in the range of 0.2-1.0 micron. (A typical second order grating for GaA1As laser is 0.24 micron).
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 18, 1989
- Accession Number
- ADA206427
Entities
People
- Nadav Bar-chaim