Alternate Arsenic and Antimony Sources for the OMCVD Fabrication of Semiconductors

Abstract

There has been considerable interest in the effect of sterically demanding ligands on the synthesis and properties of organometallic derivatives of the main group elements. Organometallic compounds incorporating such ligands have been shown to exhibit some unusual properties. Once isolated, the neo- Pentylarsenic (III) bromides were used as starting materials for synthesis of the primary and secondary arsines, AsNpH2 and AsNp2H. Since these compounds were of direct interest as OMCVD precursors for the growth of GaAs, vapor pressure measurements were made in addition to the characterization data described above. In addition the reactivity of the primary and secondary arsines with trimethylgallium was examined and resulted in the preparation of the new compounds, Np(H)AsGaMe2 and Np2AsGaMe2. The properties of these new (arsenic) gallium were described and were compared to those of the (trimethylsily1) methyl analogs. Keywords: Antimony, Arsenic.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1988
Accession Number
ADA206483

Entities

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  • John C. Pazik

Organizations

  • American Society for Engineering Education

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  • Advanced Electronics
  • Air Platforms
  • C4I

DTIC Thesaurus Topics

  • Arsenicals
  • Chemical Shifts
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Diffraction
  • Elimination Reactions
  • Equations
  • Heat Energy
  • Materials
  • Measurement
  • Resonance
  • Scattering
  • Spectra
  • Vacuum Distillation
  • Vapor Pressure
  • X Rays

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  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene