In-Situ Stress Measurements during Thermal Oxidation of Silicon
Abstract
A two beam laser reflection technique was used to measure SiO2 film stress during Si oxidation, i.e. in-situ at the growth temperature. Results show a higher compressive intrinsic film stress near the Si-SiO2 interface and a lower stress in the bulk of the SiO2 film. Thermal stress is also measured by monitoring the SiO2 film covered Si substrate curvature changes during temperature excursions. Our new results are in general agreement with previous ex-situ stress measurements and may indicate that film stress, being highest at the interface, influences the interface reaction in Si oxidation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 14, 1989
- Accession Number
- ADA206546
Entities
People
- E. Kobeda
- Eugene A. Irene
Organizations
- University of North Carolina at Chapel Hill