Fundamental and Practical Studies of Metal Contacts on Mercury Zinc Telluride
Abstract
Further understanding the role that the weak Hg-Te bond plays during metal/HgCdTe interface formation has a primary goal of our investigations during this reporting period. Metal/HgCdTe systems in general are highly disruptive, exhibiting a high degree of intermixing of semiconductor substrate components with the overlayer metal. The complexity of the interfaces formed on HgCdTE makes it difficult to isolate the various mechanisms leading to Fermi-level movement in these systems. During this reporting period, we have taken several approaches to investigate these effects under more simplified conditions. We have continued our study of metal/HgCdTe interfaces formed at low temperature, an approach which inhibits metal indiffusion, chemical reaction, and Hg loss, thus leading to a more simplified interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1988
- Accession Number
- ADA206560
Entities
People
- William E. Spicer
Organizations
- Stanford University