Studies of Interfacial Chemistry between Metals and Their Effect on Electronic Systems
Abstract
The technical problem was to study the interfacial chemistry on the metal/III-V semiconductor systems and their influence on electronic properties of interfaces. The study was concentrated on GaAs and to a lesser extent InP - two representative III-V semiconductors of foremost technological interest. The studies also included oxidation partly because of the presence of oxides at interfaces of practical devices, and studies of III-V semiconductor heterojunctions which are very closely related to the problems investigated in this proposal. Also, some amendments of the program were implemented to touch on current developments in the field of III-V semiconductor interfaces. A broad range of laboratory techniques been used with particular emphasis on photoemission spectroscopy for thin overlayers and I-V and C-V electrical measurements for thick metallic overlayers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1988
- Accession Number
- ADA206632
Entities
People
- I. Lindau
- William E. Spicer
Organizations
- Stanford University