Chemical Beam Epitaxy of ZnSe

Abstract

The objective of the program is to determine optimum growth parameters for the chemical beam epitaxy of ZnSe. In addition microstructural, optical, and electrical characterization of the material will be performed to assess the material's quality and potential; comparisons will be made with material grown by molecular beam epitaxy. Zinc selenides.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1989
Accession Number
ADA206635

Entities

People

  • Leslie A. Kolodziejski

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Compound Semiconductors
  • Electron Spectroscopy
  • Electronics Laboratories
  • Epitaxial Growth
  • Laminar Flow
  • Laser Beams
  • Lasers
  • Materials
  • Military Research
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Electronics
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology