Structures for High Frequency Transistor

Abstract

Submicron vertical electron flow structures were grown by molecular beam epitaxy (MBE) with and without ballistic electron launchers. Both electron flow down toward the substrate and up away from the substrate were studied. Angle evaporation of metal, on the sides of etched vertical channels, was used to form Schottky gates. The placement of the gates at the launch plane for ballistic electrons was found to be critical. Ohmic contacts with improved performance and stability on n-type GaAs were studied using poly-Si on GaAs, Co on GaAs, and epitaxial Ge on GaAs.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1989
Accession Number
ADA206658

Entities

People

  • J. W. Mayer
  • Jeremy Wendt
  • K. Kavanaugh
  • Lester F. Eastman

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Charge Density
  • Chemistry
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electrical Properties
  • Electrons
  • Epitaxial Growth
  • Fermi Levels
  • Field Effect Transistors
  • Measurement
  • Metal-Semiconductor Junctions
  • Phase
  • Resistance
  • Scattering
  • Semiconductors
  • Solid Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics