Three-Dimensional Modelling for Contact Resistance of Current Flow into a Source/Drain Region
Abstract
Various extensions of the transmission line model are introduced to find the resistance for current flow in MOSFET source/drain regions. The geometry is taken to be a rectangular box with a rectangular contact on the upper surface. Explicit formula are derived by assuming that the current flow is restricted to various geometrical planes. Comparison of basic results with simulation and experimental data is good. Comparison with simulation results for misalignment is less good.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1988
- Accession Number
- ADA206694
Entities
People
- Ellis Cumberbatch
- Weifu Fang
Organizations
- Claremont Graduate University