Non-Linear Optical Techniques for Thin Film Growth and Visible Ultraviolet Lasers
Abstract
The goals of this AFOSR-supported program have been: 1) to investigate novel applications of non-linear gas phase photochemistry to the low temperature growth of semiconductor and metal films and 2) to develop new sources of stimulated emission at short wavelengths (lambda < 200 nm). This work has resulted in several significant accomplishments: 1) epitaxial semiconductor (Ge) films have been grown o GaAs at temperatures as low as 285 C by laser photochemical vapor deposition (LPVD); 2) NH3 has been demonstrated as a photosensitizer in the LPVD growth of films; 3) Ge/Si alloys have been grown by LPVD and analyzed; 4) the photochemical nature of laser assisted MOCVD growth of GaAs on GaAs has been demonstrated; and 5) the excited state structure of Zn2, Cd2, Ar2, and Ne2 has been examined by laser spectroscopy. Epitaxial, Semiconductor, Laser assisted, Ultraviolet germanium, Ionization, Lasers, Sensitizers, Gallium arsenides, Silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1988
- Accession Number
- ADA206811
Entities
People
- James Gary Eden
Organizations
- University of Illinois Urbana–Champaign