High-Fill-Factor 160 x 244-Element and 320 x 244-Element PtSi Schottky- Barrier IR-CCD Image Sensors
Abstract
Two high-fill factor IR-CCD imagers, with PtSi Schottky-barrier detectors, were successfully demonstrated. The 160-element x 244-element imager has 80 micron x 40 micron pixels, with a fill factor of 60%, and a saturation signal of up to 2,500,000 electrons/pixel. For operation with a 300-K background, 30 frame/s, f/2.35 cold shield, and a 3.4 micron long-pass filter, a noise equivalent temperature (NE Delta T) of 0.04 C was measured for this imager. The 320-element x 244-element imager has 40 micron x 40 micron pixels, a fill factor of 43%, and a saturation signal of up to 1.5 x 10 to the 6th power electrons/pixel. For operation with a 300K background, 30 frames/s, and f/2.0 cold shield, a shot-noise-limited NE Delta T of 0.038 C was measured for this imager. Both of the above imagers show no loss of horizontal and vertical resolution due to charge-transfer inefficiency for operation of the serial output register with a 2-phase CCD clock. This report describes the design, processing, operation and performance of the new 160 x 244 and 320 x 244 IR-CCD imagers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1988
- Accession Number
- ADA206822
Entities
People
- F. V. Shallcross
- G. M. Meray
- Rachel A. Miller
- T. S. Villani
- W. F. Kosonocky
Organizations
- Sarnoff Corporation