Growth Studies of Metal-Metal/Semiconductor Structures

Abstract

The overall goal of the research program is to develop an atomistic approach to gain an understanding of the mechanisms of growth processes and to contribute to the development of metal metal and metal semiconductor heterostructures. The Phase I research involved (i) reliable modelling of underlying atomic interactions within the atomic constituents of the substrate, interface, and adlayer; (ii) static and dynamical studies of interfacial energetics and kinetics. A survey of available schemes has been made and a strategy for our own future modelling efforts is identified. Keywords: Nickel, Copper.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1989
Accession Number
ADA206988

Entities

People

  • Betsy M. Rice
  • C. S. Murthy
  • M. J. Redmon

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reactions
  • Computational Science
  • Computer Simulations
  • Critical Temperature
  • Crystal Structure
  • Crystals
  • Diffusion Coefficient
  • Electron Density
  • Energy Levels
  • Epitaxial Growth
  • Experimental Data
  • First Principles Calculations
  • Ground State
  • Materials
  • Materials Science
  • Molecular Dynamics

Readers

  • Computational Fluid Dynamics (CFD)
  • Electrochemical Surface Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene