Molecular Beam Epitaxial Growth of Hg(1-x)CdxTe

Abstract

The 11-Vi compound hg1-cCdxTe is a material of considerable interest as a semi-conductor for optical devices, particularly in the infrared spectral regions. Solid solutions appear to exist for all values of x, and for values of x between about 0.2 and 1.0 the material behaves as a semiconductor with a variable bandgap between 0.05ev(x=0.2) and 1.53ev(x=1) at room temperature. Mercury Cadmium Tellurides.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA207218

Entities

People

  • K. L. Moazed

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Compounds
  • Chemistry
  • Compound Semiconductors
  • Diffusion Pumps
  • Elements
  • Epitaxial Growth
  • Materials
  • Materials Engineering
  • Materials Science
  • North Carolina
  • Phase Diagrams
  • Semiconductors
  • Solid Solutions
  • Solid State Physics
  • Transition Temperature
  • United States

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics