VLSI Integrated Circuit Contact Reliability by Interface Spectroscopy.
Abstract
Metal semiconductor contacts comprise one of the most important interfaces in modern microelectronics. However, the underlying physical mechanisms which lead to their gross electrical characteristics are not well understood. The thrust of our work under AFOSR contract No. F-30602-85-C-0072 has been to explore the microscopic origins of the energy barrier present at the metal semiconductor interface. We feel that only with such an understanding can the degradation and reliability of ohmic and rectifying contracts be understood and hence better controlled. The work we will report can be divided into three separate, but yet very inter-related, topics. First, we developed and utilized forward bias capacitance techniques for determining the interface state distribution in silicon Schottky diodes. These techniques were applied to as deposited and annealed palladium silicon diodes as well as epitaxial and non-epitaxial nickel silicide structures. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1989
- Accession Number
- ADA207666
Entities
People
- E. S. Yang
- Harold Evans
Organizations
- Columbia University