Reactive Ion Etching of Polymer Films.

Abstract

The need for nanometer sized features in integrated circuits calls for the use of dry etching techniques using glow discharge plasmas. The reactive ion etching, RIE, mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight walled etched structures. The design of processes and materials for RIE requires a knowledge of the effects of operating variables on various parameters. In the present work, the parameter emphasized is the etch rate. A novel aspect of the apparatus used incorporates a laser interferometer for in situ measurements of etch rate. Keywords: Reactive ion etching; Plasma; Resist microlithography. (MJM)

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Document Details

Document Type
Technical Report
Publication Date
May 12, 1989
Accession Number
ADA207674

Entities

People

  • B. C. Dems
  • C. M. Solbrig
  • Francisco J. Medellı́n-Rodrı́guez
  • S. K. Obendorf
  • Y. M. Namaste

Organizations

  • Cornell University School of Chemical and Biomolecular Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alkenes
  • Chemical Engineering
  • Chemical Synthesis
  • Chemistry
  • Classification
  • Electron Beams
  • Engineering
  • Etching
  • Glow Discharges
  • Integrated Circuits
  • Materials
  • Measurement
  • Organic Chemistry
  • Organometallic Compounds
  • Polymeric Films
  • Reactive Ion Etching
  • Resistance

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Directed Energy