Molecular Weight Dependence of E-Beam Resist Sensitivity

Abstract

Any measure of lithographic sensitivity must take into account both the events during exposure (latent image formation) and their subsequent conversion into an etch-resistant stencil (real image formation) by selective dissolution. Poly(methyl methacrylate), a popular positive chain-scissioning resist, is developed by dissolving exposed areas. Poly(chloromethyl styrene), a negative resist, crosslinks on exposure and is developed by dissolving the unexposed polymer. In each case the equations relating primary exposure events to parameters such as molecular weight need to be coupled with the dissolution characteristics to define sensitivity. The reconciliation of lithographic sensitivity (and resolution) with conventional radiation measurements also requires an understanding of important secondary phenomena. Some, like microporosity and gel-swelling, may also depend on the initial molecular weight and molecular weight distribution of the polymer.

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Document Details

Document Type
Technical Report
Publication Date
May 12, 1989
Accession Number
ADA207835

Entities

People

  • A. A. Krasnopoler
  • B. C. Dems
  • Francisco J. Medellı́n-Rodrı́guez
  • S. K. Obendorf
  • Y. M. Namastet

Organizations

  • Cornell University School of Chemical and Biomolecular Engineering

Tags

Communities of Interest

  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Alkenes
  • Chemical Engineering
  • Chemistry
  • Classification
  • Copolymers
  • Electron Beams
  • Electronics Industry
  • Engineering
  • Films
  • Gamma Rays
  • Materials
  • Military Research
  • Molecular Weight
  • Organic Materials
  • Polymeric Films
  • Polymers
  • Thin Films

Readers

  • Nanofabrication and Microfabrication.
  • Polymer Science and Technology
  • Theoretical Analysis.