Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

Abstract

The ellipsometric measurement of refractive indices for films less than 50 nm thick is of dubious quality due to the significance of the size of random errors relative to the accuracy required to extract reliable index values from the measurements. In this study the various errors are quantitatively assessed as a function of the film thickness, and then compared with experimental data obtained from differently prepared silicon dioxide films on silicon. The new results confirm previous work that shows higher refractive indices for thinner films. Transmission electron microscopy results confirm the results and graded and discreet layer models are compared.

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Document Details

Document Type
Technical Report
Publication Date
May 09, 1989
Accession Number
ADA207853

Entities

People

  • A. Kalnitsky
  • Eugene A. Irene
  • J. P. Ellul
  • J. W. Andrews
  • S. Chongsawagvirod
  • S. P. Tay

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Algorithms
  • Angle Of Incidence
  • Chemistry
  • Data Reduction
  • Electron Microscopy
  • Electronics
  • Experimental Data
  • Materials Science
  • North Carolina
  • Numerical Analysis
  • Oxide Films
  • Silicon Dioxide
  • Thick Films
  • Thin Films
  • Transmission Electron Microscopy
  • United States

Readers

  • Regression Analysis.
  • Spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene