Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor
Abstract
Dense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor. At deposition temperatures between 700 and 800 C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(111) substate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed. Keywords: Organic chemistry, Physical chemistry, Silica, Films, CVD, Silicon carbide, Organometallic precursor.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1989
- Accession Number
- ADA208273
Entities
People
- Bing-xi Sun
- Corrina Czekaj
- John Hudson
- Klaus Lenz
- Leonard V. Interrante
- Wei Lee
Organizations
- Rensselaer Polytechnic Institute