Decomposition Kinetics and Film Foundation of an Organometallic Precursor to SiC on Si(100)

Abstract

The absorption and decomposition kinetics of the SiC precursor (CH3Si(H)mu(CH2)2Si(CH3) CH2SiH2CH3) have been studied on the Si(100) surface using a combination of molecular beam mass spectrometry and Auger electron spectroscopy. The intact precursor adsorbs with a heat of adsorption of about 10 kcal/mol. The decomposition rate becomes measurable at about 800 K, and increases with increasing temperatures. The resulting films are stoichiometric, polycrystalline SiC, with partial epitaxial orientation relative to the substrate. Keywords: Silicon carbide, Organometallic precursor, Silicon.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1989
Accession Number
ADA208384

Entities

People

  • John B. Hudson
  • Klaus Lenz
  • Krishna Rajan
  • Leonard Interrante
  • Wei Lee

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Mass Spectra
  • Mass Spectrometers
  • Mass Spectrometry
  • Measurement
  • Molecular Beams
  • Silicon Carbide
  • Spectra
  • Spectrometers
  • Spectrometry
  • Spectroscopy
  • Waveforms

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene