SEU (Single Event Upset) Test Techniques for 256k Statics RAMs and Comparisons of Upsets Induced by Heavy Ions and Protons
Abstract
Test procedures needed to observe the single event phenomena of various 256k CMOS/NMOS static RAMS are described. The tests were conducted with both protons and heavy ions, yielding correlated comparisons of results. Most of the single event vulnerability data using EDI EDH8832C, IDT IDT71256, OMNI-WAVE OW62256, and RCA XCDM62256 32k x 8 static RAMs. Among the four device types only OW62256s were resistant to single event latch-up (SEL). Estimates of the single event upset (SEU) rate in space show that OW62256s are the least susceptible devices. Also, our test and data reduction methods have taken into consideration multiple upsets caused by a single ion, the effect of read/write access time, and scaling related to feature size. The scaling study was made possible by comparing the SEU test results of an additional four types of radiation hardened IDT static RAMs: IDT6116V (2k x 8), IDT6167 (16k x 1), IDT7164 (8k x 8), and IDT7187 (64k x 1). Keywords: Random access memory devices, High density memories, Single event upset tests.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1988
- Accession Number
- ADA208429
Entities
People
- J. H. Elder
- J. V. Osborn
- R. Chitty
- Rokutano Koga
- W. A. Kolasinski
Organizations
- The Aerospace Corporation