DARPA (Defense Advanced Research Projects Agency) Review on EHF Devices Held in San Diego, California on 24-25 January 1989

Abstract

Contents: Agenda; Attendance List; Overview of Millimeter Wave Components and Systems for Army Military Applications; Ballistic Transport in the Vertical and Lateral Domains; Permeable Base Transistor and Regrowth FET development; Transport Considerations for EHF Devices; GaA1As/GaAs Heterojunction Bipolar Transistors for mm-Wave Applications; Heterojunction Power FET Technology; Molecular Beam Epitaxy and Resonant Tunneling Devices; Array Applications; MM-Wave Phased-Array Antenna Concepts; Materials Choice for Ballistic and Drift Transport Devices; A1InAs-GaInAs HEMTs FOR HIGH SPEED APPLICATIONS; Measurement of Response of High Speed Tunneling Devices; EHF HBT Development; and On Wafer Characterization of High Speed Circuits.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1989
Accession Number
ADA208564

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Bipolar Junction Transistors
  • Boltzmann Equation
  • Crystal Structure
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Jet Propulsion
  • Materials
  • Phased Arrays
  • Plastic Explosives
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Transistors

Readers

  • Academic Conference Management
  • Phased Array Antenna Design.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - DoD 5G Program