Multilayered Electronic Materials and Devices Based on III-V Compounds
Abstract
The objectives of this program were to purchase and install a Metal Organic Chemical Vapor Deposition (MOCVD) system in the Electronic Materials Laboratory at the Tri-Cities University Center of the University of Washington. This system would be used to grow films of III-V compounds. This reactor will be used to grow layered structures based on Gallium Arsenide, AlxGa1-xAs, InyGa(1- y)As or GaAsxP1-x. Prior to shipping the MOCVD system, Spire personnel grew GaAs films on GaAs substrates with the TUC 500XT reactor. Excellent results were obtained. Films grown on two-inch wafers exhibited a thickness uniformity of better than 2% and a doping uniformity better than 4.5%. With three-inch wafers, films were characterized by a thickness uniformity of 4% and doping uniformity of 8%. They also found that the Aluminum Gallium Arsenide composition uniformity was better than 2% for AlGaAs films grown on two-inch waters. Finally, the background doping in epitaxial GaAs films grown with the TUC reactor was determined to be less than 1.5x10 to the 14th power/CC. These performance figures represent a significant improvement in GaAs epitaxial film growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1988
- Accession Number
- ADA208861
Entities
People
- Larry C. Olsen
Organizations
- University of Washington