Ultrathin Polymer Films for Microlithography
Abstract
Ultrathin (14 - 22 nm) poly(methacrylate) (PMMA) films prepared by both spin casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spin casting have been explored as high-resolution electron beam resists. One-eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask production. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac films are only a few per centimeters squared, considerably less than the density in spin-cast PMMA films of comparable thickness. Reprints.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 1989
- Accession Number
- ADA208982
Entities
People
- C. C. Fu
- C. W. Frank
- David R. Allee
- P. Maccagno
- S. W. Kuan
Organizations
- Stanford University