Morphology Control of Photoelectrochemically Etched Profiles in n-GaAs
Abstract
Photoelectromechanical etching of (100) n-gallium arsenide along the (011) crystallographic direction produces V-grooves. It was determined that the groove angle and rate of undercutting of the photoresist mask was dependent on electrolyte composition, light intensity and bias potential. Grating structures could be produced in neutral aqueous electrolytes containing KCL, with angles varying from 80 to 120 degrees as the KCL concentration was varied from 0.01M to 4M. The angles could also be controlled with applied bias and with light intensity. The V-grooves are formed due to the exposure of Ga-rich faces, their composition and angle probably depending on the extent of adsorption of Chloride(-). Non-adsorbing electrolytes such as Fluoride(-) and Sulfate(-) generally gave rougher morphologies and/or passivation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA208991
Entities
People
- Jianguo Li
- Michael M. Carrabba
- R. D. Rauh