Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS Devices
Abstract
A rate equation for charge buildup which includes carrier sweep out, geminate recombination, hole/electron trapping, and effects of internal fields is developed. The first moment of the resulting charge distribution is calculated to yield the midgap voltage shift as a function of irradiation time. The initial midgap voltage shift per dose and the maximum midgap voltage shift are derived. The field dependence of these quantities is shown to be a consequence of the field dependence of the hole/electron capture cross sections and geminate recombination escape probability. The results of this formulation show that the E to the 1/2 power decrease in the midgap shift per dose with increasing applied field. The theory is validated by comparison with experimental results obtained on 225 A thermal oxide on p-type silicon test capacitors irradiated under bias at room temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 26, 1989
- Accession Number
- ADA209064
Entities
People
- L. W. Aukerman
- R. J. Krantz
- T. C. Zeitlow
Organizations
- The Aerospace Corporation