Reliability of Gold Thin Film Conductors for Microelectronic Applications

Abstract

The formation of holes in gold metallizations during thermal annealing can be prevented by thin indium or tin underlayers. Pulsed electromigration prolongs the lifetime of metallizations. This increase in lifetime is dependent on frequency and duty cycle. Aluminum films deposited by the ionized cluster beam technique have a substantially longer resistance against electromigration compared to conventionally deposited Aluminum films. Electrotransport, Thin films, Metallization, Reliability, Microelectronic circuits, Grain boundary grooving, ICB, Pulsed electromigration.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1989
Accession Number
ADA209122

Entities

People

  • R. E. Hummel
  • R. T. Dehoff

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Annealing
  • Boundaries
  • Contracts
  • Current Density
  • Electronics Industry
  • Engineering
  • Failure Mode And Effect Analysis
  • Films
  • Grain Boundaries
  • Materials
  • Materials Science
  • Metal Films
  • Metals
  • Solid State Physics
  • Temperature Gradients
  • Thin Films

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene