Picosecond Electrooptic Investigations of Integrated Circuits
Abstract
The continuing development of integrated electronic circuits operating to 110 GHz, and the development of digital circuits with toggle rates above 20 GHz, has given rise to commensurate need for instrumentation capable of diagnosing the internal operation of these circuits. These analog microwave and millimeter-wave integrated circuits are critical to the development of compact, low-cost, and frequency agile radar and communication systems for military applications, while the ultrafast digital technologies address the need in military electronic systems to rapidly acquire, digitize, and process very large amounts of data. However, current electronic instrumentation falls far short of the need for internal, high-frequency probing capability without severely disturbing circuit operation. Direct electrooptic sampling provides extremely high bandwidth while permitting non-invasive examination of internal node voltages of both digital and microwave GaAs integrated circuits. Characterization of this probe in terms of accuracy, repeatability, and invasiveness, as well as extension of its probing capability to the millimeter regime, is critical to its continued viability as a powerful diagnostic tool. This report documents work on the 15-month contract in Picosecond Electrooptic Investigations of Integrated Circuits performed at Stanford University. Specific program tasks include: 1) Increase of Electrooptic bandwidth; 2) Improvements to Noise Performance and Repeatability; 3) Evaluation of Spatial Resolution and Signal Crosstalk; 4) Voltage Calibration; 5) Evaluation of Electrooptic Sampling; 6) Electrooptic Vector Measurements; and 7) Full Wafer Probing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1989
- Accession Number
- ADA209134
Entities
People
- B. A. Auld
- David M. Bloom
- J. L. Freeman
- M.J.W. Rodwell
- R. Majidi-ahy
Organizations
- Stanford University