Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs

Abstract

The goal of the phase I research was to demonstrate that p-type GaAs could be imaged and etched using a scanning tunneling microscope (STM) tip to produce features smaller than the micrometer level. The material used in this study was Zn doped. The etching solution was 5mM NaOH, 1mM EDTA. Negative biases, i.e. tip positive, of 4 volts yielded etched regions after subsequent oxidation decomposition of the processed region. These regions could be produced much smaller than 1 micrometer. Therefore, the phase I research showed that STM can be used to selectively etch regions of p-type GaAs under electrochemical conditions. This procedure has potential application in the custom production of small, fast semi-conductor devices.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1989
Accession Number
ADA209216

Entities

People

  • Larry D. Mccormick

Tags

DTIC Thesaurus Topics

  • Cells
  • Coatings
  • Current Density
  • Decomposition
  • Electrochemical Cells
  • Electrodes
  • Gallium Arsenides
  • Materials
  • Micrometers
  • Microscopy
  • Military Research
  • Oscilloscopes
  • Oxidation
  • Quantum Tunneling
  • Scanning
  • Three Dimensional
  • Tunneling

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.