Raman Spectroscopy Study of Microstructural Geometries in Semiconductors

Abstract

We report a program of the study of semiconductor microstructural geometries by Raman scattering (RS). From RS at 300K and photoluminscence at 4K we have deduced information about the alloy potential fluctuations in MBE fabricated Al0.48In0.52As/InP grown at different substrate temperatures. A comparative study of RS, transmission electron microscopy (TEM) and conductivity has been performed on molecular beam deposited microcrystalline Si and Ge. A detailed analysis of the RS lineshape reveals that it is more sensitive to point defects (impurities) in relation to TEM. Raman spectroscopy, Semiconductor microstructures.

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Document Details

Document Type
Technical Report
Publication Date
Apr 07, 1989
Accession Number
ADA209247

Entities

People

  • Fred H. Pollak

Organizations

  • Brooklyn College

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Energy Bands
  • Ion Lasers
  • Materials
  • Measurement
  • Optical Properties
  • Point Defects
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene