Initial Stages of Metal/Semiconductor Interface Formation: Au and AgON Si(111)

Abstract

We have studied the atomic structures formed by monolayer coverages of Au and Ag on the Si(111) surface using primarily the technique of Impact- Collision Ion Scattering Spectroscopy (ICISS). For the case of Au films annealed at 700 C, three different types of LEED patterns are formed depending on the fractional monolayer coverage: 5x1, sq. root of 3 x sq. root of 3, and 6x6. The ICISS data reveal that all the three surfaces are structurally similar: the Au atoms reside above the Si(111) plane, most likely in threefold-hollow sites, and the different surfaces appear to be characterized by rows (5x1) or a honeycomb network (sq. root of 3 x sq. root of 3 and 6x6). In contrast, the Ag films deposited at elevated substrate temperature (480 C) display only a sq. root of 3 x sq. root of 3 LEED pattern for coverages ranging from 0.25 to 35 monolayers. A trimer model appears to be more consistent with the low coverage Ag ICISS data rather than a honeycomb arrangement of the Ag atoms.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 20, 1989
Accession Number
ADA209490

Entities

People

  • Judy H. Huang
  • R. Stanley Williams
  • Richard S. Daley
  • Robert M. Charatan

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Atomic Structure
  • Atoms
  • Biochemistry
  • California
  • Chemistry
  • Classification
  • Collisions
  • Diffraction
  • Experimental Data
  • Films
  • Honeycomb Structures
  • Scattering
  • Security
  • Semiconductors
  • Spectroscopy
  • Substrates
  • United States

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene