Microfabrication of WO3-Based Microelectrochemical Devices

Abstract

A new photolithographic process for the patterning of Tungsten trioxide is reported. A layer of RF sputtered polycrystalline WO3 can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Platinum microelectrodes each approx. 50 micrometers long, 2 micrometers wide, and 0.3 micrometers thick and spaced 1.2 micrometers apart. The modified microelectrode arrays were characterized by electrochemistry, by surface profilometry, and by scanning electron microscopy. A pair of microelectrodes connected by WO3 comprises a microelectrochemical transistor with pH-dependent electrical characteristics based on the pH and potential dependent conductivity of WO3 associated with the reversible electrochemical reaction WO3 + nH(+) + ne(-) yields HnWo3.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 12, 1989
Accession Number
ADA209529

Entities

People

  • Mark S. Wrighton
  • Martin O. Schloh
  • Nicholas Leventis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aqueous Solutions
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Dry Etching
  • Electrochemical Reactions
  • Electrochemistry
  • Electrodes
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • High Resolution
  • Materials
  • Military Research
  • Scanning Electron Microscopy
  • Transistors
  • United States

Readers

  • Electrochemical Surface Science
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster