A Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, PtGa and PtGa2 on Gallium Arsenide

Abstract

Epitaxial thin films of three different Platinum Gallium intermetallic compounds have been grown Gallium Arsenide by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using x-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450 C and 600, respectively. Thin films of Pt2GA react with GaAs at temperatures as low as 200 C to form phases with higher Gallium concentration. Epitaxial growth of thin films, Interface chemistry, Composition analysis, Thermodynamic control.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1989
Accession Number
ADA209698

Entities

People

  • David K. Shuh
  • Kang L. Wang
  • Larry P. Sadwick
  • R. Stanley Williams
  • Young K. Kim

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Band Structures
  • Chemistry
  • Control
  • Diagrams
  • Diffraction
  • Electron Spectroscopy
  • Elements
  • Epitaxial Growth
  • Films
  • Gallium Arsenides
  • Molecular Beam Epitaxy
  • Phase Diagrams
  • Thin Films
  • Transition Temperature
  • United States

Fields of Study

  • Materials science

Readers

  • Aerospace Engineering
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene