A Bolt-on Deposition Source for Ultra-High-Vacuum Growth of Intermetallic Compound Films
Abstract
An eight-inch ConFlat flange assembly with both an electron-beam evaporator and a Knudsen cell has been constructed to deposit intermetallic compounds containing transition and group-III metals with specific phase composition. Initial depositions of thin films using this design have shown excellent epitaxy with the desired compound stoichiometry. Thin film growth, Transition metals, Low vapor pressure, Deposition pressure, Material evaporation, Stoichiometry control, Single crystal epitaxy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1989
- Accession Number
- ADA209699
Entities
People
- David K. Shuh
- R. Stanley Williams
- Young K. Kim
Organizations
- University of California, Los Angeles