Transport and Submillimeter Wave Spectroscopy of GaAs/Al sub xGa sub 1-x and In sub x Ga sub 1-x As Heterostructures
Abstract
The research emphasizes the physics of the electronic processes in GaAs/Al(x)Ga(1-x)As and In(x)Ga(1-x)As/InP heterojunction thin film structures and focuses in two directions: one in superlattice materials and the other in submillimeter wave spectroscopy. After a brief description is given of the accomplishments in both directions, together with a list of the publications of work supported by the contract, a detailed account is made of the systematic investigation of transport through In(x)Ga(1-x)As/InP superlattices grown by Chemical Beam Epitaxy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 16, 1989
- Accession Number
- ADA209836
Entities
People
- D. C. Tsui
Organizations
- Princeton University