Zinc Telluride Growth on InP

Abstract

Initial studies have concentrated on the preparation of epitaxial Zinc Selenide on Indium Phosphide (100) substrates and an optimum bakeout procedure for the substrates determined. Subsequently, the doping of ZnSe with small amounts of Tellurium (up to ca 5 at %) was achieved and the structural, compositional and optical properties of the epitaxial layers investigated. It was demonstrated by photoluminescence measurement that in small concentrations approx. 2 at %) Te acts as an isolated isoelectronic trap in ZnSe and at higher concentrations clusters of Te atoms form. This results in broadened photoluminescence emission peaks. It proved impossible with our atmospheric pressure MOCVD reactor and using a conventional source of Te to prepared epitaxial layers of the ternary ZnSe(1-y)Te(y) with Te concentration in excess of ca 5 at %. Keywords: Thin films, Crystal lattices, Layers, P Type semiconductors, N Type semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 14, 1989
Accession Number
ADA209924

Entities

People

  • J. O. Williams
  • Nicholas Maung

Organizations

  • University of Manchester

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Energy Bands
  • Flow Rate
  • Materials
  • Microscopes
  • Microscopy
  • Optical Properties
  • Semiconductors
  • Spectra
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene