Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide
Abstract
The first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs)(100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron-beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs(100). This study supports the contention that PtGa2 can be a suitable, temperature-stable contact material on GaAs substrates. Epitaxial films; Ultra-high vacuum; Chemical stability; Compound semiconductors; Contact degradation; Schottky barrier; Fermi level pinning.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1989
- Accession Number
- ADA210077
Entities
People
- David K. Shuh
- Kang L. Wang
- Larry P. Sadwick
- R. Stanley Williams
- Young K. Kim
Organizations
- University of California, Los Angeles