Effects of Coherent Scattering on Infrared Absorption in Doped Semiconductors
Abstract
An improved theoretical model was developed for interpreting the infrared absorption spectra of doped semiconductors. The model focused on the specific problem of coherent scattering effects or optical channeling. These effects are produced by coherent multiple internal reflections from the polished plane-parallel faces of an optically thin sample. The coherent scattering produces oscillating noise on the infrared absorption spectrum. This noise makes it difficult to determine the correct absorption coefficient from the spectrum. The effect occurs in both silicon and gallium arsenide. The specific expression for the transmittance in the presence of scattering was determined and the inversion of this relation was calculated to obtain the absorption coefficient. In cases where the equation based on coherent scattering did not give results, a combination of coherent and incoherent scattering equations was used to minimize the channeling oscillations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1989
- Accession Number
- ADA210224
Entities
People
- Gail J. Brown
- Peggy J. Grigsby
Organizations
- Wright Laboratory