Bias and Oxide Thickness Dependence of Trapped Charge Buildup in MOS devices

Abstract

A rate equation for charge buildup, which includes sweep-out, hole / electron trapping, tunneling, recombination, and the effects of internal fields, is generalized to apply to negative gate biases and include electron injection from the silicon and aluminum gate interfaces. The dependence of the midgap voltage shift on oxide thickness is explicitly examined. The theoretical results are verified by comparison with experimental results obtained on p-type silicon test capacitors of different oxide thicknesses under varying positive and negative gate biases.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1989
Accession Number
ADA210264

Entities

People

  • R. J. Krantz
  • T. C. Zietlow

Organizations

  • The Aerospace Corporation

Tags

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Capacitors
  • Charge Density
  • Classification
  • Conduction Bands
  • Dose Rate
  • Electron Flux
  • Electron Holes
  • Electrons
  • Energy Bands
  • Free Electrons
  • Quantum Tunneling
  • Radiation
  • Semiconductors
  • Thickness
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics