The Growth of Gallium Nitride Films via the Innovative Technique of Atomic Layer Epitaxy

Abstract

This contract involves investigating the efficacy of atomic layer and molecular beam epitaxy techniques for the growth of GaN (a wide bandgap semiconductor). During this reporting period, work was extended to growth of materials in the Al-Ga-In-N solid solution series as well as pure AlN and InN, and heterostructures of these materials. In addition, work was begun on the growth of cubic boron nitride. The first reported heterostructures of cubic GaN/ AlN were produced. Work also continued on characterization of the cubic GaN already produced. Much improved material and higher growth rates were observed with the installation of a NCSU-designed, constructed, and commissioned electron cyclotron resonance plasma source. Epitaxial growth, Crystallography.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA210380

Entities

People

  • Michael J. Paisley
  • Robert F Davis
  • Zlatko Sitar

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystals
  • Cyclotron Resonance
  • Electron Spectroscopy
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Engineering
  • Materials
  • Materials Science
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene