Submillimeter Quantum Electronics
Abstract
The phenomena of resonant tunneling has been explored in GaAs/AlGaAs heterostructures that were grown by molecular-beam epitaxy. The physics and fundamental speed limitations were studied, and devices such as oscillators, multipliers, and mixers have been demonstrated. Useful output has been obtained at room temperature for frequencies up to 425 GHz. The feasibility of resonant- tunneling transistors has been examined, suggesting cutoff frequencies above 100 GHz. Planar antenna arrays have been developed and tested up to 1.7 THz. In the area of compact solid-state instrumentation, a 555 GHz receiver was developed that had a noise temperature of 45000 K and weighed 3 kg.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 14, 1989
- Accession Number
- ADA210439
Entities
People
- T. C. Sollner
Organizations
- Massachusetts Institute of Technology