Pseudomorphic Interfaces

Abstract

The objectives of this work were to develop the epitaxial growth of ZnSe on epitaxially grown GaAs, fully characterize this interface electrically, and fabricate a depletion mode field effect transistor which incorporates this interface in the device structure. The electrical quality of our ZnSe/GaAs interfaces was investigated with capacitance versus voltage (CV) and current versus voltage (IV) measurements. The CV characteristics of annealed Au/ZnSe/p-GaAs capacitors were nearly ideal, exhibiting interface state densities which compare favorably with the densities reported at typical AlGaAs interfaces. The occurrence of both hole accumulation (for p-type GaAs) and inversion (for n-type GaAs) at the ZnSe/p-GaAs interface indicates the presence of a substantial valance band offset. The lack of accumulation or inversion layers for electrons suggests a relatively small conduction band discontinuity. The fabrication and IV characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The IV characteristics of the transistors are close to ideal; channel modulation indicates that the Fermi level is not pinned at the ZnSe/GaAs interface.

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Document Details

Document Type
Technical Report
Publication Date
Jun 09, 1988
Accession Number
ADA210530

Entities

People

  • J. A. Cooper Jr.
  • L. A. Kolodziejski
  • M. R. Melloch
  • R. F. Pierret
  • R. L. Gunshor

Organizations

  • Purdue University

Tags

DTIC Thesaurus Topics

  • Auger Electrons
  • Band Gaps
  • Capacitance
  • Capacitors
  • Crystal Growth
  • Electrical Properties
  • Electron Microscopy
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Fermi Levels
  • Field Effect Transistors
  • Molecular Beam Epitaxy
  • Semiconductors
  • Transistors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics