Characterization of Diamond Kilms by Thermogravimetric Analysis and Infrared Spectroscopy
Abstract
Recent advances in the growth of diamond films by low pressure chemical vapor deposition (CVD) have generated a great deal of interest in developing diamond materials for a variety of technological applications. Unique optical, thermal and mechanical properties make diamond the material of choice for many purposes. A technique involving microwave plasma assisted chemical vapor deposition for the growth of diamond films was described recently by Chang, et. al. Here, we report results obtained in characterizing free-standing diamond films produced by this technique. Diamond films were grown on silicon wafers at about 3 micrometers/hr by microwave plasma assisted chemical vapor deposition. The infrared transmission of a 3 micrometer thick film varied from near 61% at 5000/cm to near 75% at 1000/cm. Thermogravimetric analysis indicated that the diamond films oxidize in air at about 650C and are less resistant to oxidation than graphite. A film containing nitrogen was grown by adding N2 to the feed gas.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1989
- Accession Number
- ADA210564
Entities
People
- C. E. Johnson
- D. C. Harris
- W. A. Weimer
Organizations
- Naval Air Weapons Station China Lake