Deep Traps and Sidegating in GaAs Devices
Abstract
This is the final technical report for ARO contract DAALO3-86-K-0070. In the report we describe our progress in the areas of semi-insulating GaAs conduction mechanisms and how they apply to the phenomena of sidegating and backgating in GaAs based devices. The experimental and theoretical program evolved into a highly collaborative effort between industry and university with several joint publications resulting. The sidegating/backgating problem has finally been acknowledged as can be seen by the recent creation of a highly interactive workshop dedicated to such effects. Research included the establishment of electrical and optical characterization facilities specifically designed for the study of the high resistivity materials and their effects on devices. We have made advances in several exponential signals for Deep level Transient Spectroscopy (DLTS), imaging of deep level domains using voltage contrast in a scanning electron microscope (SEM), surface stability of various passivation techniques and one dimensional, steady state and transient numerical simulations of semi-insulating GaAs transport properties. Additionally we discovered the chaotic properties of the low frequency oscillations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1989
- Accession Number
- ADA210740
Entities
People
- David A. Johnson
- George N. Maracas
Organizations
- Arizona State University