Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon, 3-5
Abstract
Although an ultimate goal of this work is to achieve long term reliable laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructures (QWH's), or similar III-V QWH's, grown on Si, this has proven to be a formidable enough problem that to the best of our knowledge no one has exceeded the results we reported in 1987 and 1988. This problem is of such dimensions that it may not be solved for as much as 10 years, or even more All we know so far is that continuous (cw) 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that, indeed, the heat sinking of an Al(x)Ga(1-x)As-GaAs QWH laser on Si is better than a similar laser on a GaAs substrate. Nevertheless, the problem of growing better versions of these devices (i.e., long-lived high performance cw 300 K lasers on Si) has run into the fundamental issue of the large GaAs-Si lattice and thermal expansion mismatch, and hence the built-in difficulty in reducing the defects guaranteed by mismatch. Accordingly, and as much as we have worked further on the problem of Al(x)Ga(1-x)As-GaAs QWH lasers on Si, we have worked as hard on other QWH laser problems, as well as a impurity-induced layer disordering (or layer intermixing, IILD) and its application in laser devices. We briefly describe this work below and append the titles and abstracts of the papers we have published on laser studies and IILD. (RH)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA210758
Entities
People
- G. E. Stillman
- K. C. Hsieh
- N. Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign