Picosecond Carrier Dynamics Near the Gallium Arsenide Surface

Abstract

Numerical modeling procedures were applied to experimental data from picosecond transient-reflectivity experiments in order to characterize carrier dynamics near the GaAs surface. A wide range of surface was studied. The results provide an excellent description of carrier dynamics for (100) surfaces of intrinsic, n-doped, and Cr-doped material. An analytical model, including ambipolar diffusion, bulk recombination, and surface recombination, describes results for the washed material. Surface charge present in unwashed material necessitated use of a more complex numerical model that treats electrons and holes separately. This provide a good description of reflectivity kinetics for the above sample types. The relationship of the new work to prior related work is reviewed. Keywords: Gallium arsenide; Carrier dynamics; Picosecond reflectivity; Surface recombination.

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Document Details

Document Type
Technical Report
Publication Date
Mar 28, 1989
Accession Number
ADA210770

Entities

People

  • Dean C. Marvin
  • Gregory J. Rollins
  • John E. Wessel
  • Steven M. Beck

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Charge Carriers
  • Charge Density
  • Chemistry
  • Diffusion
  • Dye Lasers
  • Dynamics
  • Electron Density
  • Electrons
  • Kinetics
  • Lasers
  • Materials
  • Physics Laboratories
  • Picosecond Time
  • Reflectivity
  • Surface Chemistry
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Computational Fluid Dynamics (CFD)
  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene