International Workshop on Beam Injection Assessment of Defects in Semiconductors Held in Meudon-Bellevue (France) on 18-20 July 1988
Abstract
Contents: SEM microcharacterization of semiconductors; Electron and photon-matter interaction; Modelling of the EBIC measurements of diffusion lengths and the recombination contrast; Minority carrier diffusion length: measurement; STEM-catholuminescence; Intrinsic or extrinsic origin of the recombinations at defects; LBIC quantitative mapping; Scanning DLTS; CL in laser heterojunctions; CL in quantum-wells; Electron and optical beam testing of integrated circuits. (rh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 20, 1989
- Accession Number
- ADA210842
Entities
People
- A. Laugier
- C. Donolato
- D. S. Holt
- Eliahu Napehan
- Jean-philippe Collin
- Jennifer Blain Christen
- M. Kittler
- O. Breitenstein
- P. Henoc
Organizations
- National Center for Scientific Research