Focused Ion Beam Implantation
Abstract
The capability to transfer the positions of features from a given level of an integrated circuit layout to the focused ion beam machine is important in most of the intended applications of focused ion beams implantation. The capability is developed to transfer patterns written in MAGIC (a layout software system) to the focused ion beam format. The machine development was used to implant the channels on Si-NMOS devices. A test structure was used where each die had 256 transistors each one with probe contact pads. Each die was aligned to the focused ion beam and then all 256 channels were implanted with a variety of doses and geometrics. In the area of GaAs devices, Gunn diodes were implanted with variety of doping gradients between the contacts. The doping gradients were chosen according to calculated computer models. The fine pattern writing of the focused ion beam system is used to generate electrodes on GaAs/GaAlAs modulation doped structures. These electrodes had a minimum width of 0.05 microns and were used to observe resonant tunneling parallel to the surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1989
- Accession Number
- ADA210977
Entities
People
- John Melngailis
Organizations
- Massachusetts Institute of Technology