The Growth of Expitaxial GaAs and GaAlAs on Silicon Substrates by OMVPE

Abstract

The work programme for this quarter was as follows: (i) Growth experiments to establish the dopant concentrations needed to meet the active and contract layer specifications of both GaAs/GaAs and GaAs/Si FETs. (ii) Growth of GaAs/Si and GaAs/GaAs/GaAs FET structures. (III) Processing and comparison of GaAs/GaAs and GaAs/Si FETs. (iv) Investigation of low temperature techniques for silicon surface preparation. (v) Investigation of dislocation filtering structures containing strained layer superlattices (SLS) consisting of alternating layers of different elastic constants. and (vi) Further defect etching experiments and correlation with transmission electron microscopy (TEM) results.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1988
Accession Number
ADA211365

Entities

People

  • D. J. Stirland
  • J. A. Beswick
  • Lucas Taylor
  • R. R. Bradley
  • T. B. Joyce

Tags

DTIC Thesaurus Topics

  • Barometric Pressure
  • Dislocations
  • Electron Microscopy
  • Epitaxial Growth
  • Field Effect Transistors
  • Filtration
  • Gallium Arsenides
  • High Temperature
  • Hydrogen
  • Low Temperature
  • Materials
  • Microscopy
  • Selenium
  • Specifications
  • Substrates
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics