Graded Bandgap Solar Cells
Abstract
This program has emphasized investigations of graded bandgap solar cells. The key objective was to determine the feasibility of obtaining high efficiencies with a graded emitter heterojunction structure. The Al(x)Ga(1-x) As ternary system was selected for actual device fabrication and characterization. Interpretation of photoresponse data for graded devices indicated that the minority carrier diffusion length was essentially zero for x equal to or greater than .25. This property of the AlGaAs films made it impossible to obtain the expected photocurrent from the graded devices. However, studies were carried out which clearly indicated that the structures with graded emitters were characterized by an enhanced photoresponse relatice to homojunction devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA211537
Entities
People
- Larry C. Olsen
Organizations
- University of Washington